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PD - 94623
SMPS IGBT
WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGP35B60PD
VCES = 600V VCE(on) typ. = 1.85V @ VGE = 15V IC = 22A
Applications
* * * * Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies
G E
Features
* * * * * * * NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability
n-channel
Equivalent MOSFET Parameters RCE(on) typ. = 84m ID (FET equivalent) = 35A
E
Benefits
G
C
* Parallel Operation for Higher Current Applications * Lower Conduction Losses and Switching Losses * Higher Switching Frequency up to 150kHz
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 25C IF @ TC = 100C IFRM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref. Fig. C.T.4) Clamped Inductive Load Current
Max.
600 60 34 120 120 40 15 60 20 308 123 -55 to +150
Units
V
d
A
Diode Continous Forward Current Diode Continous Forward Current Maximum Repetitive Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature for 10 sec. Mounting Torque, 6-32 or M3 Screw
e
V W
C 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Thermal Resistance
Parameter
RJC (IGBT) RJC (Diode) RCS RJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Weight
Min.
--- --- --- --- ---
Typ.
--- --- 0.50 --- 6.0 (0.21)
Max.
0.41 1.7 --- 40 ---
Units
C/W
g (oz)
1
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2/6/03
IRGP35B60PD
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)CES
V(BR)CES/TJ
Min.
600 -- -- -- -- -- --
Typ.
-- 0.78 1.7 1.85 2.25 2.37 3.00 4.0 -10 36 3.0 0.35 1.30 1.20 --
Max. Units
-- -- -- 2.15 2.55 2.80 3.45 5.0 -- -- 375 -- 1.70 1.60 100 nA V S A mA V V V
Conditions
VGE = 0V, IC = 500A 1MHz, Open Collector IC = 22A, VGE = 15V IC = 35A, VGE = 15V IC = 22A, VGE = 15V, TJ = 125C IC = 35A, VGE = 15V, TJ = 125C IC = 250A VCE = 50V, IC = 22A, PW = 80s VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 125C IF = 15A, VGE = 0V IF = 15A, VGE = 0V, TJ = 125C VGE = 20V, VCE = 0V
Ref.Fig
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
V/C VGE = 0V, IC = 1mA (25C-125C)
4, 5,6,8,9
RG VCE(on)
Internal Gate Resistance Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
3.0 -- -- -- -- -- -- --
7,8,9
mV/C VCE = VGE, IC = 1.0mA
gfe ICES VFM IGES
10
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qgc Qge Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Coes eff. Coes eff. (ER) RBSOA trr Qrr Irr Total Gate Charge (turn-on) Gate-to-Collector Charge (turn-on) Gate-to-Emitter Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Time Related)
Min.
-- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Typ.
160 55 21 220 215 435 26 6.0 110 8.0 410 330 740 26 8.0 130 12 3715 265 47 135 179
Max. Units
240 83 32 270 265 535 34 8.0 122 10 465 405 870 34 11 150 16 -- -- -- -- -- pF VGE = 0V VCC = 30V f = 1Mhz ns J ns J nC IC = 22A VCC = 400V VGE = 15V
Conditions
Ref.Fig 17 CT1
IC = 22A, VCC = 390V VGE = +15V, RG = 3.3, L = 200H TJ = 25C
CT3
f
IC = 22A, VCC = 390V VGE = +15V, RG = 3.3, L = 200H TJ = 25C
CT3
fAA f
IC = 22A, VCC = 390V VGE = +15V, RG = 3.3, L = 200H TJ = 125C IC = 22A, VCC = 390V VGE = +15V, RG = 3.3, L = 200H TJ = 125CAfAA
CT3 11,13 WF1,WF2 CT3 12,14 WF1,WF2
16
g
Effective Output Capacitance (Energy Related) Reverse Bias Safe Operating Area Diode Reverse Recovery Time Diode Reverse Recovery Charge Peak Reverse Recovery Current
g
-- --
VGE = 0V, VCE = 0V to 480V TJ = 150C, IC = 120A
15
3 CT2
FULL SQUARE -- -- -- -- -- -- 42 74 80 220 4.0 6.5 60 120 180 600 6.0 10 A nC ns
VCC = 480V, Vp =600V Rg = 22, VGE = +15V to 0V TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C IF = 15A, VR = 200V, di/dt = 200A/s IF = 15A, VR = 200V, di/dt = 200A/s IF = 15A, VR = 200V, di/dt = 200A/s
19
21
19,20,21,22
CT5
Notes: RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 1.85V and IC =22A. ID (FET Equivalent) is the equivalent MOSFET ID
rating @ 25C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
VCC = 80% (VCES), VGE = 15V, L = 28 H, RG = 22 . Pulse width limited by max. junction temperature. Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06. Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.
2
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IRGP35B60PD
70 60 50
IC (A)
350 300 250
Ptot (W)
40 30 20 10 0 0 20 40 60 80 100 120 140 160 T C (C)
200 150 100 50 0 0 20 40 60 80 100 120 140 160 T C (C)
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
1000
Fig. 2 - Power Dissipation vs. Case Temperature
70 60 50 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V
100
ICE (A)
10 1 10 100 1000
IC A)
40 30 20 10 0 0 1 2 3 VCE (V) 4 5
VCE (V)
Fig. 3 - Reverse Bias SOA TJ = 150C; VGE =15V
70 60 50 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 70 60 50
Fig. 4 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s
VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V
ICE (A)
30 20 10 0 0 1 2 3 VCE (V) 4 5
ICE (A)
40
40 30 20 10 0 0 1 2 3 VCE (V) 4 5
Fig. 5 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s
Fig. 6 - Typ. IGBT Output Characteristics TJ = 125C; tp = 80s
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3
IRGP35B60PD
800 700 600 500
VCE (V) ICE (A)
10 T J = 25C T J = 125C 9 8 7 6 5 4 TJ = 125C T J = 25C 0 5 10 VGE (V) 15 20 3 2 1 0 5 10 VGE (V) 15 20 ICE = 11A ICE = 22A ICE = 35A
400 300 200 100 0
Fig. 7 - Typ. Transfer Characteristics VCE = 50V; tp = 10s
10 9 8 7
VCE (V)
I sa t n o sF r adCr e t -I ( ) n t n e u owr ur n a A
F
100
Fig. 8 - Typical VCE vs. VGE TJ = 25C
6 5 4 3 2 1 0 5 10 VGE (V)
ICE = 11A ICE = 22A ICE = 35A
10
TJ = 150C TJ = 125C TJ = 25C
1 0.8
1.2
1.6
2.0
2.4
15
20
Forward Voltage Drop - V FM (V)
Fig. 9 - Typical VCE vs. VGE TJ = 125C
800 700 600
Energy (J)
Fig. 10 - Typ. Diode Forward Characteristics tp = 80s
1000
Swiching Time (ns)
EON
td OFF
100
500 400 EOFF 300 200 100 0 0 5 10 15 20 IC (A) 25 30 35 40
tdON
10
tF tR
1 0 10 20 30 40
IC (A)
Fig. 11 - Typ. Energy Loss vs. IC TJ = 125C; L = 200H; VCE = 390V, RG = 3.3; VGE = 15V. Diode clamp used: 30ETH06 (See C.T.3)
Fig. 12 - Typ. Switching Time vs. IC TJ = 125C; L = 200H; VCE = 390V, RG = 3.3; VGE = 15V. Diode clamp used: 30ETH06 (See C.T.3)
4
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IRGP35B60PD
800 700 600
1000
tdOFF
Swiching Time (ns)
EON
Energy (J)
500 400
100
tdON tF tR
EOFF
300 200 100 0 0 10 20 30 40 50
10
1 0 10 20 30 40 50
RG ()
RG ( )
Fig. 13 - Typ. Energy Loss vs. RG TJ = 125C; L = 200H; VCE = 390V, ICE = 22A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3)
30 25
Fig. 14 - Typ. Switching Time vs. RG TJ = 125C; L = 200H; VCE = 390V, ICE = 22A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3)
10000
Cies
Capacitance (pF)
20
Eoes (J)
1000
15 10 5 0 0 100 200 300 400 500 600 700 VCE (V)
Coes
100
Cres
10 0 20 40 60 80 100
VCE (V)
Fig. 15- Typ. Output Capacitance Stored Energy vs. VCE
16 14
Normalized V CE(on) (V)
Fig. 16- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
1.4
12 10
VGE (V)
400V
1.2
8 6 4 2 0 0 50 100 150 200 Q G , Total Gate Charge (nC)
1.0
0.8 -50 0 50 100 150 200 T J (C)
Fig. 17 - Typical Gate Charge vs. VGE ICE = 22A
Fig. 18 - Normalized Typ. VCE(on) vs. Junction Temperature IC = 22A, VGE= 15V
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5
IRGP35B60PD
100
100
VR = 200V TJ = 125C TJ = 25C
80
VR = 200V TJ = 125C TJ = 25C
I F = 30A
I F = 30A
60
I IRRM - (A)
t rr - (ns)
I F = 15A
10
IF = 15A
40
I F = 5.0A
I F = 5.0A
20 100
di f /dt - (A/s)
1000
1 100
di f /dt - (A/s)
1000
Fig. 19 - Typical Reverse Recovery vs. dif/dt
Fig. 20 - Typical Recovery Current vs. dif/dt
800
1000
VR = 200V TJ = 125C TJ = 25C
600
VR = 200V TJ = 125C TJ = 25C
IF = 30A
di(rec)M/dt - (A/s)
Q RR - (nC)
400
I F = 5.0A I F = 15A I F = 30A
I F = 15A IF = 5.0A
200
0 100
di f /dt - (A/s)
1000
100 100
di f /dt - (A/s)
1000
Fig. 21 - Typical Stored Charge vs. dif/dt
Fig. 22 - Typical di(rec)M/dt vs. dif/dt,
6
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IRGP35B60PD
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20 0.10 0.05
0.01
0.01 0.02
J
R1 R1 J 1 2
R2 R2
R3 R3 3 C 3
Ri (C/W) i (sec) 0.139 0.000257 0.077 0.194 0.001418 0.020178
1
2
0.001
Ci= i/Ri Ci i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.0001 0.001 0.01 0.1
0.0001 1E-006 1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10
0.1
0.05 0.01 0.02
J
R1 R1 J 1 2
R2 R2
R3 R3 3 C 3
Ri (C/W) i (sec) 0.363 0.000112 0.864 0.473 0.001184 0.032264
1
2
0.01
Ci= i/Ri Ci i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001 0.001 0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
IRGP35B60PD
L
L DUT
0
VCC
80 V Rg
DUT
480V
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
PFC diode
L
R=
VCC ICM
DUT / DRIVER
Rg
VCC
Rg
DUT
VCC
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - Resistive Load Circuit
REVERSE RECOVERY CIRCUIT
VR = 200V
0.01 L = 70H D.U.T. D G IRFP250 S
dif/dt ADJUST
Fig. C.T.5 - Reverse Recovery Parameter Test Circuit
8
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IRGP35B60PD
450 400 350 300 250 VCE (V) 200
5% VCE 90% ICE
45 40 tf 35 30 25
VCE (V)
450 400 350 300 250
tr 90% test current 10% test current TEST CURRENT
45 40 35 30 25 20 15 10
5% VCE Eon Loss
ICE (A)
20 15
5% ICE
200 150 100 50 0 -50 9.00
150 100 50 0
Eoff Loss
10 5 0 -5 0.80
5 0 -5 9.60
-50 -0.20
0.00
0.20
0.40
0.60
9.20
9.40
Time(s)
Time (s)
Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 25C using Fig. CT.3
Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 25C using Fig. CT.3
3
IF 0
trr ta tb
4
Q rr
2
I RRM
0.5 I RRM di(rec)M/dt 0.75 I RRM
5
1
di f /dt
4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M /dt - Peak rate of change of current during tb portion of trr
1. dif/dt - Rate of change of current through zero crossing 2. I RRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 IRRM extrapolated to zero current
Fig. WF3 - Reverse Recovery Waveform and Definitions
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ICE (A)
9
IRGP35B60PD
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
15.90 (.626) 15.30 (.602) -B3.65 (.143) 3.55 (.140) 0.25 (.010) M D B M
-A5.50 (.217)
-D-
5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4
NOTES: 1 DIMENSIONS & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIONS ARE SHOWN MILLIMETERS (INCHES). 4 CONFORMS TO JEDEC OUTLINE TO-247AC.
20.30 (.800) 19.70 (.775) 1
2X
5.50 (.217) 4.50 (.177)
2
3
-C-
LEAD ASSIGNMENTS 1 - GATE 2 - COLLECTOR 3 - EMITTER 4 - COLLECTOR
*
14.80 (.583) 14.20 (.559)
4.30 (.170) 3.70 (.145)
0.80 (.031) 3X 0.40 (.016) 2.60 (.102) 2.20 (.087)
* LONGER LEADED (20mm) VERSION AVAILABLE (TO-247AD)
TO ORDER ADD "-E" SUFFIX TO PART NUMBER
2.40 (.094) 2.00 (.079) 2X 5.45 (.215)
1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M
C AS
2X
3.40 (.133) 3.00 (.118)
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
Dimensions in Millimeters and (Inches)
TO-247AC Part Marking Information
Notes : T his part marking information applies to devices produced before 02/26/2001 or for parts manufactured in GB.
EXAMPLE: T HIS IS AN IRFPE30 WIT H AS S EMBLY LOT CODE 3A1Q
PART NUMBER INT ERNAT IONAL RECTIFIER LOGO
IRFPE30
3A1Q
9302
AS S EMBLY LOT CODE
DAT E CODE (YYWW) YY = YEAR WW = WEEK
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: T HIS IS AN IRFPE30 WIT H AS S EMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2000 IN T HE AS S EMB LY LINE "H"
PART NUMBER INT E RNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE
IRFPE30
56 035H 57
DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H
TO-247AC package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 02/03
10
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